GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp Al2O3 Sample Plate s PH: 68 Purity:
$74.69
Description
s PH: 68 Purity:
001 mm (50 millionths of an inch)
GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method
Standard Size
GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, 1sp Al2O3 Sample Plate s PH: 68 Purity:GaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 10x10x0. 5mm Polishing: One side polished Doping: un doped Conductor type: S I Mobility: 3990 5030 cm^2 V. S Resistivity :( 2. 5 5. 1)x10^8 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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