HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Revision:SEMI HB11-0819 - Superseded 1-1102 (Reapproved 0309) - オブジェクト基盤装置モデルのためのSECS-II

1-1102 (Reapproved 0309) - オブジェクト基盤装置モデルのためのSECS-II プロトコル用暫定仕様

Slices can be any crystallographic orientation and should be polished or lapped and etched on both surfaces

It provides an evaluation guide and reference sources appropriate to facilities and equipment where toxic and flammable gases are used and stored in gaseous or liquid form

本スタンダードは，global Physical Interfaces & Carriers Committeeで技術的に承認されている。現版は2009年9月4日，global Audits and Reviews Subcommitteeにて発行が承認された。2009年10月にwww

HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Revision:SEMI HB11-0819 - Superseded 1-1102 (Reapproved 0309) - オブジェクト基盤装置モデルのためのSECS-IIThe sapphire single crystal ingot is used as a substrate material for HB LED applications. To permit common processing equipment to be used in multiple device fabrication lines, it is essential for the sapphire single crystal ingot specifications to be standardized. This Specification provides the characteristics of sapphire single crystal ingot, consisting of the physical specification, orientation, shape, and defect standard. This Specification is